Experience blazing speed and expansive storage with the Samsung 9100 PRO SSD – engineered for high-intensity tasks such as AI workloads, video rendering, and cutting-edge gaming. With blistering sequential speeds of up to 14,800 MB/s read and 13,400 MB/s write, it delivers performance that’s twice as fast as the previous-generation 990 PRO SSD, empowering you to tackle demanding workflows without compromise.
Powered by next-gen PCIe 5.0 technology, the 9100 PRO offers lightning-fast data transfers and exceptional multitasking. Boasting random read/write speeds of 2,200K/2,600K IOPS, this drive makes game loads instant, editing seamless, and multitasking effortlessly smooth – keeping your creativity and productivity flowing.
With up to 8TB of storage, you’ll have more than enough room for massive AI models, high-res media files, and your entire gaming library. Say goodbye to limits and hello to freedom – access your content on demand without sacrificing speed or capacity.
Thermal performance meets smart engineering with a new 5nm controller that improves power efficiency by up to 49% versus the 990 PRO. Advanced cooling keeps the drive operating smoothly during intense sessions, ensuring consistent reliability and cool operation under pressure.
Unlock the drive’s full potential using Samsung Magician Software – offering intuitive firmware updates, enhanced encryption, and real-time health monitoring for a worry-free experience and peak performance over time.
Backed by Samsung – the world’s No.1 flash memory brand since 2003 – the 9100 PRO SSD features in-house manufactured DRAM and NAND for quality, durability, and trust you can count on.
(as of Apr 16, 2025 11:19:37 UTC – Details)
Product information
| Specification | Details |
|---|---|
| Model | Samsung 9100 PRO 4TB (MZ-VAP4T0) |
| Interface | PCIe 5.0 x4, NVMe 2.0 |
| Form Factor | M.2 2280 (Single-Sided) |
| Sequential Read | Up to 14,800 MB/s |
| Sequential Write | Up to 13,400 MB/s |
| NAND | Samsung V-NAND V8, 236-layer TLC |
| Controller | Samsung Presto (S4LY027), 5nm |
| DRAM Cache | 4GB LPDDR4X |
| pSLC Cache | Approx. 442 GB |
| Power Consumption | Idle: 6.5 mW, Max: 9 W |
| Endurance | 2,400 TBW |
| Encryption | AES 256-bit, TCG Opal, IEEE1667 |
| Warranty | 5 Years |
























